SK hynix starts mass production of 3d nand memory with 238 layers – Computer – News

South Korean reminiscence maker SK hynix has begun mass manufacturing of its 238-layer TLC nand reminiscence. In accordance with the producer, the reminiscence chips are sooner and extra economical than its earlier nand chips.

The brand new SK hynix reminiscence chips obtain knowledge switch charges of two.4Gbit/s per chip, representing a 50 % improve over the earlier technology TLC NAND with 176 layers. In flip, precise learn and write speeds elevated by 20 %. As well as, energy consumption when studying knowledge fell by 21 %. In accordance with the producer, the brand new chips might be utilized in smartphones, PCIe 5.0 SSDs and SSDs for servers.

SK hynix demonstrated its reminiscence chips with 238 layers final 12 months, however had not but began mass manufacturing. By rising the variety of layers, reminiscence makers can get extra chips out of a wafer. This could result in decrease manufacturing prices, amongst different issues. SK hynix states that its manufacturing effectivity will increase by 34 % with the transfer to 238-layer reminiscence. The South Korean reminiscence maker is beginning manufacturing of 512Gbit chips, which equates to 64GB. Later this 12 months, the producer needs to double that density to 1Tbit or 128GB per chip.

SK hynix calls its new chips ‘4d-nand’, though in observe it’s nonetheless a variant of 3d-tlc. 4d-nand is a advertising time period that the producer has been utilizing since 2018 for reminiscence with a cost entice flash design and a peri-under-cell format. With ctf, costs are saved in an insulator for much less interference; that is historically finished in a conductor. With puc, sure circuitry is positioned beneath the reminiscence cell for larger manufacturing effectivity and density. Usually these circuits are positioned subsequent to the cell.